作者其他论文
文献详情
Band offset and interface chemistry of HfO2/Si (001) prepared by electron-beam evaporation in ultrahigh vacuum using atomic oxygen
文献类型:期刊论文
作者:Run, Xu[1]  Tang Minyan[2]  Yan Zhijun[3]  Wang Linjun[4]  Xia Yiben[5]  Xu Fei[6]  
机构:[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.;
[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.;
[3]Nanjing Univ Aeronaut & Astronaut, Dept Appl Phys, Nanjing 210016, Peoples R China.;
[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.;
[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.;
[6]Shanghai Univ, Dept Phys, Shanghai 200072, Peoples R China.;
通讯作者:Run, X (reprint author), Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
年:2011
期刊名称:PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS影响因子和分区
卷:248
期:4
页码范围:937-940
增刊:正刊
收录情况:SCI(E)(WOS:000288856300027)  
所属部门:材料科学与工程学院;理学院
语言:外文
ISSN:0370-1972
人气指数:58
浏览次数:58
关键词:band offsets; electron beam evaporation; HfO2; high-k materials; interfaces; photoelectron spectroscopy
摘要:
The band offset and interface chemistry of HfO2 films prepared by ultrahigh-vacuum electron-beam evaporation was investigated by synchrotron radiation photon electron spectroscopy (SRPES). A relatively large valence band (VB) offset of the HfO2 film with Si was determined to be 3.56 eV. Both the Hf-silicate and a small number of Hf-Si bonds were formed at the interface of HfO2/Si. This Hf-Si bond, which cannot be prevented completely in an ultrahigh-vacuum preparation system using the Hf metalli ...More
0
评论(0 条评论)
登录