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Influence of thickness on strain state and surface morphology of AlN grown by HVPE
文献类型:期刊论文
作者:Sun Maosong[1]  Zhang Jicai[2]  Huang Jun[3]  Li Xuewei[4]  Wang Linjun[5]  Liu Xuehua[6]  Wang Jianfeng[7]  Xu Ke[8]  
机构:[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.;Chinese Acad Sci, Platform Characterizat & Test, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.;
[2]Chinese Acad Sci, Platform Characterizat & Test, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.;Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Peoples R China.;
[3]Chinese Acad Sci, Platform Characterizat & Test, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.;
[4]Chinese Acad Sci, Platform Characterizat & Test, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.;
[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.;
[6]Chinese Acad Sci, Platform Characterizat & Test, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.;
[7]Chinese Acad Sci, Platform Characterizat & Test, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.;Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Peoples R China.;
[8]Chinese Acad Sci, Platform Characterizat & Test, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.;Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Peoples R China.;
通讯作者:Zhang, JC; Xu, K (reprint author), Chinese Acad Sci, Platform Characterizat & Test, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.; Zhang, JC; Xu, K (reprint author), Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Peoples R China.
年:2016
期刊名称:JOURNAL OF SEMICONDUCTORS
卷:37
期:12
增刊:正刊
收录情况:中国科技核心期刊  
所属部门:材料科学与工程学院
语言:外文
ISSN:1674-4926
被引频次:1
人气指数:5
浏览次数:5
关键词:AlN; HVPE; surface morphology; strain state
摘要:
AlN thick films were grown on c-plane sapphire substrates by hydride vapor phase epitaxy at high temperature. The evolution of the strain state and crystal quality of AlN with increase of thickness were investigated by transmission electron microscopy, field-emission scanning electron microscopy, Raman spectra and atomic force microscopy (AFM). As the thickness increased, the stress in the epilayers decreased gradually, which was attributed to the reaction of dislocations at the first several mi ...More
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