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Hopping transport through defect-induced localized states in molybdenum disulphide
文献类型:期刊论文
作者:Qiu, Hao[1]  Xu, Tao[2]  Wang, Zilu[3]  Ren, Wei[4]  Nan, Haiyan[5]  Ni, Zhenhua[6]  Chen, Qian[7]  Yuan, Shijun[8]  Miao, Feng[9]  Song, Fengqi[10]  Long, Gen[11]  Shi, Yi[12]  Sun, Litao[13]  Wang, Jinlan[14]  Wang, Xinran[15]  
机构:[1]Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Natl Ctr Microstruct & Quantum Manipulat, Nanjing 210093, Jiangsu, Peoples R China.;
[2]Southeast Univ, Minist Educ, Key Lab MEMS, SEU FEI Nano Pico Ctr, Nanjing 210096, Jiangsu, Peoples R China.;
[3]Southeast Univ, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China.;
[4]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China.;
[5]Southeast Univ, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China.;
[6]Southeast Univ, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China.;
[7]Southeast Univ, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China.;
[8]Southeast Univ, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China.;
[9]Nanjing Univ, Sch Phys, Nanjing 210093, Jiangsu, Peoples R China.;
[10]Nanjing Univ, Sch Phys, Nanjing 210093, Jiangsu, Peoples R China.;
[11]Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Natl Ctr Microstruct & Quantum Manipulat, Nanjing 210093, Jiangsu, Peoples R China.;
[12]Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Natl Ctr Microstruct & Quantum Manipulat, Nanjing 210093, Jiangsu, Peoples R China.;
[13]Southeast Univ, Minist Educ, Key Lab MEMS, SEU FEI Nano Pico Ctr, Nanjing 210096, Jiangsu, Peoples R China.;
[14]Southeast Univ, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China.;
[15]Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Natl Ctr Microstruct & Quantum Manipulat, Nanjing 210093, Jiangsu, Peoples R China.;
通讯作者:Wang, XR (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Natl Ctr Microstruct & Quantum Manipulat, Nanjing 210093, Jiangsu, Peoples R China.
年:2013
期刊名称:NATURE COMMUNICATIONS影响因子和分区
卷:4
增刊:不确定
收录情况:SCI(E)(WOS:000326472400005)  ESI高被引论文(WOS:000326472400005)  
所属部门:理学院
重要成果类型:ESI高被引
语言:外文
ISSN:2041-1723
人气指数:544
浏览次数:544
摘要:
Molybdenum disulphide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower mobility than theoretical calculations and native n-type doping. Here we report a study of transport in few-layer molybdenum disulphide, together with transmission electron microscopy and density functional theory. We provide direct evidence that sulphur vaca ...More
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